Infineon BSS169H6327 N-Channel Logic Level Enhancement Mode MOSFET

Release date:2025-10-21 Number of clicks:120

Infineon BSS169H6327: A High-Performance N-Channel Logic Level Enhancement Mode MOSFET

The Infineon BSS169H6327 is a highly efficient N-Channel Logic Level Enhancement Mode MOSFET designed to meet the demanding requirements of modern low-voltage, high-speed switching applications. As electronic devices continue to trend toward lower power consumption and higher efficiency, this MOSFET stands out due to its exceptional performance in circuits controlled by microcontrollers, logic gates, or other low-voltage sources.

One of the key features of the BSS169H6327 is its low threshold voltage (VGS(th)), typically around 1.5V, which allows it to be fully driven by logic-level signals as low as 3.3V or even 2.5V. This makes it particularly suitable for use in portable devices, IoT modules, and embedded systems where power efficiency and compact design are critical. With a continuous drain current (ID) of 170mA and a low on-state resistance (RDS(on)) of 10Ω, it ensures minimal power loss and heat generation during operation, enhancing both reliability and energy efficiency.

The device is housed in a SOT-23 surface-mount package, which is ideal for space-constrained PCB designs. Its fast switching characteristics also make it an excellent choice for load switching, power management, and signal amplification applications. Additionally, the BSS169H6327 offers robust performance with a drain-source voltage (VDS) of 100V, providing ample headroom for various low-power circuits.

Infineon’s commitment to quality ensures that this MOSFET delivers high reliability, low leakage currents, and strong electrostatic discharge (ESD) protection, making it a trusted component in consumer electronics, industrial controls, and automotive systems.

ICGOOODFIND: The Infineon BSS169H6327 is an outstanding logic-level MOSFET that combines low driving voltage, efficient power handling, and a compact form factor, making it an optimal choice for modern low-power electronic designs.

Keywords: Logic Level MOSFET, Low Threshold Voltage, Enhancement Mode, SOT-23 Package, Low Power Switching.

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