Infineon BSC034N03LS 30V N-Channel MOSFET Datasheet and Application Overview

The Infineon BSC034N03LS is a highly efficient N-Channel MOSFET designed using Infineon’s advanced OptiMOS™ technology. Optimized for low voltage applications, this power MOSFET offers an exceptional balance of low on-state resistance and high switching performance, making it ideal for a broad range of power management tasks.

With a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 60A at 25°C, the BSC034N03LS is particularly suited for high-current, low-voltage switching applications. One of its standout features is its extremely low typical on-resistance (RDS(on)) of just 3.4 mΩ at 10 V gate-source voltage. This low RDS(on) minimizes conduction losses, leading to higher efficiency and reduced heat generation in end applications.

The device is housed in a SuperSO8 package, which offers an excellent power-to-size ratio. This compact footprint is crucial for modern, space-constrained designs while still providing effective thermal performance. The MOSFET is also characterized by its low gate charge (Qg) and fast switching speed, which are critical for reducing switching losses in high-frequency circuits such as switch-mode power supplies (SMPS) and DC-DC converters.

Primary Applications:

Synchronous Rectification in switched-mode power supplies (SMPS).

DC-DC Conversion in computing, telecom, and server power systems.

Motor Control and driving circuits for low-voltage brushless DC (BLDC) motors.

Load Switching and power management in consumer electronics.

Battery Protection Circuits due to its low leakage and efficient switching.

When consulting the datasheet, designers should pay close attention to key parameters such as the Safe Operating Area (SOA), thermal resistance (RthJA), and the maximum pulsed drain current. Proper attention to PCB layout and heatsinking is essential to maximize performance and ensure reliability, especially under high-load conditions.

ICGOOODFIND: The Infineon BSC034N03LS stands out as a superior component for designers seeking to optimize efficiency and power density in low-voltage, high-current applications. Its combination of ultra-low RDS(on), high current handling, and a compact package makes it an excellent choice for demanding power electronics designs.

Keywords: Low RDS(on), OptiMOS™, Synchronous Rectification, DC-DC Conversion, SuperSO8 Package.