Infineon BSC889N03LSG: Advanced 30V N-Channel OptiMOS™ Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems demands semiconductor components that deliver exceptional performance. Addressing this need, the Infineon BSC889N03LSG stands out as a premier 30V N-Channel power MOSFET built on Infineon's advanced OptiMOS™ technology platform. This device is engineered to set new benchmarks in power conversion efficiency, particularly in demanding applications where every fraction of a watt counts.

A key strength of the BSC889N03LSG lies in its exceptionally low figure of merit (FOM), a critical parameter defined by its on-state resistance (R DS(on)) and total gate charge (Q G). With a maximum R DS(on) of just 0.89 mΩ at 10 V and an ultra-low gate charge, this MOSFET minimizes both conduction and switching losses. This translates directly into higher overall system efficiency and reduced heat generation, allowing for smaller heatsinks or even passive cooling in many cases. The result is a solution that enables designers to create more compact, reliable, and energy-efficient end products.

The device is housed in an ultra-compact SuperSO8 package (PG-TDSON-8), which offers an excellent trade-off between size and thermal performance. This small footprint is crucial for space-constrained applications, helping to maximize power density on the PCB. Furthermore, its low thermal resistance ensures that heat is effectively dissipated away from the silicon die, maintaining performance and reliability under continuous operation.

The BSC889N03LSG is ideally suited for a broad spectrum of high-efficiency applications. It excels as the primary switching element in synchronous rectification stages within switch-mode power supplies (SMPS) and voltage regulator modules (VRMs) for servers and data centers. Its robust performance also makes it a perfect fit for power management in consumer electronics, such as gaming consoles and high-end laptops, as well as in motor control circuits for industrial automation and battery management systems (BMS) where low-side switching is required.

ICGOO

The Infineon BSC889N03LSG is a superior 30V N-Channel OptiMOS™ MOSFET that sets a high bar for performance. Its industry-leading low R DS(on) and optimized switching characteristics make it an indispensable component for engineers designing next-generation, high-efficiency power solutions across computing, industrial, and consumer markets.

Keywords:

OptiMOS™

Low RDS(on)

Synchronous Rectification

High Efficiency

Power Density