**ADL5721ACPZN-R7: A High-Performance 6 GHz to 18 GHz, 7 W Power Amplifier**

The demand for robust, high-frequency power amplification is critical in modern electronic warfare, radar, and satellite communication systems. Addressing this need, the **ADL5721ACPZN-R7** emerges as a premier solution, delivering exceptional performance across an ultra-broadband frequency range from **6 GHz to 18 GHz**. This power amplifier stands out by integrating high output power with remarkable efficiency in a single, compact package, setting a new benchmark for wideband RF components.

Engineered for superior performance, the ADL5721ACPZN-R7 achieves a **saturated output power of 7 W (38.5 dBm)** across its entire operating band. This high power level is crucial for applications requiring long-range signal transmission and strong jamming resistance. The amplifier maintains an impressive **large-signal gain of 16 dB**, ensuring minimal input power is needed to drive the device to its full capacity, thereby simplifying system design and reducing the burden on preceding driver stages.

A key feature of this amplifier is its **high power-added efficiency (PAE)**, which typically exceeds 17%. This efficiency is vital for thermal management and power consumption in densely packed electronic systems, as it translates to less wasted energy and reduced heat dissipation. The device is fabricated on a advanced GaN-on-SiC process, which provides inherent advantages including **high breakdown voltage, superior thermal conductivity, and unmatched reliability** under severe operating conditions.

The amplifier is housed in a compact **3 mm x 3 mm LFCSP package**, making it an ideal choice for space-constrained applications without compromising on power handling. It is designed for straightforward integration, requiring a single positive supply of +12 V and incorporating internal matching networks that significantly reduce the need for external components. This simplifies PCB layout and accelerates the development cycle for complex multi-channel systems like active electronically scanned arrays (AESAs).

Furthermore, the ADL5721ACPZN-R7 is built to withstand harsh environments. It is capable of handling **10:1 VSWR mismatch at all phases** without any degradation in performance or risk of damage, a critical robustness feature for field-deployed equipment. Its operational temperature range is rigorously tested, ensuring stable performance from -55°C to +85°C.

**ICGOOODFIND**: The ADL5721ACPZN-R7 is a state-of-the-art power amplifier that masterfully combines wide bandwidth, high output power, and excellent efficiency. Its ruggedized design and compact form factor make it an indispensable component for advancing the capabilities of next-generation defense and aerospace electronic systems.

**Keywords**: Power Amplifier, GaN-on-SiC, Ultra-Broadband, High Output Power, RF Microwave.