**HMC338LC3B: A Comprehensive Technical Overview of the 20 GHz to 40 GHz GaAs pHEMT MMIC Medium Power Amplifier**

The **HMC338LC3B** represents a significant achievement in monolithic microwave integrated circuit (MMIC) technology, designed to address the demanding requirements of modern high-frequency electronic systems. Operating across an impressive **Ka-band spectrum from 20 GHz to 40 GHz**, this medium power amplifier is engineered for applications where wide bandwidth, reliable gain, and consistent power output are paramount.

Fabricated on an advanced **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, the HMC338LC3B leverages the superior electron mobility and low noise characteristics of this semiconductor technology. This foundation enables the amplifier to deliver exceptional performance metrics. A key feature is its **high linear output power**, typically providing **+20 dBm of saturated power (Psat)** across the entire band. This is complemented by a **high gain of 16 dB**, which ensures signal integrity is maintained even in complex cascaded system designs. The amplifier is also characterized by its **excellent gain flatness**, a critical parameter for broadband applications that require uniform performance without frequency-dependent degradation.

The device is housed in a leadless, RoHS-compliant 3x3 mm SMT package (LC3), making it suitable for high-volume, automated PCB assembly processes. This compact form factor is ideal for space-constrained applications like **phased array antennas, 5G millimeter-wave communication infrastructure, test and measurement equipment, and satellite communications**. The integrated design includes on-chip DC blocking capacitors and bias networks, simplifying external circuitry. Operation requires a positive supply voltage of +5V, drawing a typical current of 120 mA, and incorporates an externally adjustable power-down functionality for system power management.

Robustness is a built-in feature. The MMIC is designed with **internal matching for 50-ohm impedance**, minimizing the need for external components and streamlining the design-in process. It is also internally protected against over-voltage and electrostatic discharge (ESD), enhancing its reliability in harsh operating environments.

**ICGOOODFIND**

The HMC338LC3B stands out as a superior solution for Ka-band amplification, successfully balancing high frequency, wide bandwidth, and medium power in a highly integrated, surface-mount package. Its robust performance, driven by GaAs pHEMT technology, makes it an indispensable component for next-generation microwave systems.

**Keywords:** **Ka-Band Amplifier**, **GaAs pHEMT**, **MMIC Power Amplifier**, **20-40 GHz**, **Saturated Output Power**