**HMC558LC3B: A Comprehensive Technical Overview of the 24 GHz GaAs pHEMT MMIC Low-Noise Amplifier**
The **HMC558LC3B** from Analog Devices Inc. represents a state-of-the-art solution for low-noise amplification in the lower Ka-band and K-band microwave frequencies. This monolithic microwave integrated circuit (MMIC) is engineered to deliver exceptional performance in demanding applications such as **point-to-point radio**, satellite communication, **automotive radar systems (e.g., 24 GHz ISM band)**, and military/space systems. Fabricated using a high-performance **0.15 µm GaAs pHEMT (Pseudomorphic High Electron Mobility Transistor)** process, this amplifier sets a benchmark for low-noise figure and high gain in a miniature, surface-mount package.
**Core Technical Specifications and Performance**
The HMC558LC3B is designed to operate within a frequency range of **17 to 24 GHz**, making it ideal for the popular 24 GHz industrial, scientific, and medical (ISM) band. Its most critical performance parameters include an outstandingly **low noise figure of 1.8 dB**, which is paramount for preserving the integrity of weak received signals in the first stage of a receiver chain. This is complemented by a high **small-signal gain of 22 dB**, ensuring that the amplified signal significantly overshadows the noise introduced by subsequent stages in the system.
The amplifier provides a solid **output power performance**, with a typical output IP3 (third-order intercept point) of +23 dBm, indicating good linearity and the ability to handle interfering signals without generating excessive distortion. It requires a single positive supply voltage between +3V and +5V, drawing a nominal current of 70 mA, which aligns with the power constraints of many modern systems.
**Packaging and Application Advantages**
Housed in a leadless **3x3 mm RoHS-compliant LCC (Leadless Chip Carrier) package**, the HMC558LC3B offers a highly compact and rugged form factor suitable for high-volume automated assembly. The package is designed with exposed metal pads on its bottom side to ensure an excellent electrical ground and thermal path when mounted onto a printed circuit board (PCB).
A key application advantage is its **unconditional stability**, which means it is resistant to oscillations regardless of the source or load impedance presented to it—a critical feature for robust and reliable system design. Furthermore, it is **fully passivated for environmental protection**, enhancing its durability and longevity in harsh operating conditions. The inclusion of DC blocking capacitors on both the RF input and output ports simplifies the external biasing circuitry required for integration.
**ICGOODFIND Summary**
**ICGOODFIND**: The HMC558LC3B is a premier **24 GHz GaAs pHEMT MMIC LNA** that excels in delivering an exceptional balance of **ultra-low noise figure and high gain**. Its robust performance, compact packaging, and design maturity make it an indispensable component for enhancing receiver sensitivity and overall system performance in next-generation communication and radar applications across commercial and aerospace/defense sectors.
**Keywords**: **Low-Noise Amplifier (LNA)**, **GaAs pHEMT**, **24 GHz**, **MMIC**, **Noise Figure**
