Infineon IRLTS2242TRPBF: Ultra-Low On-Resistance P-Channel Power MOSFET for High-Efficiency Applications
The demand for higher power efficiency and compact design in modern electronic systems continues to drive innovation in power semiconductor technology. Addressing this need, Infineon Technologies introduces the IRLTS2242TRPBF, an advanced P-Channel Power MOSFET engineered to deliver exceptional performance in power management applications. With its ultra-low on-resistance (RDS(on)) and high current handling capability, this component is ideal for use in switching regulators, load switches, battery management systems, and other high-efficiency circuits.
A standout feature of the IRLTS2242TRPBF is its remarkably low on-resistance, typically as low as 4.3 mΩ at 10 V (VGS). This ultra-low RDS(on) minimizes conduction losses, which is critical for improving overall system efficiency, reducing heat generation, and enhancing thermal performance. The device is optimized for operation with low gate drive voltages, making it highly suitable for battery-powered and portable applications where lower voltage rails are common.
Housed in a compact SuperSO8 package, the MOSFET offers an excellent power density, allowing designers to save valuable PCB space without compromising on performance or reliability. The package is designed for effective heat dissipation, supporting sustained operation under high-load conditions. Furthermore, the device boasts a high maximum continuous drain current (ID) of -40 A, enabling it to handle significant power levels in various circuit topologies.
The IRLTS2242TRPBF also provides enhanced protection and robustness, featuring a low gate threshold voltage and high durability against transients. These characteristics make it a reliable choice for automotive, industrial, and consumer applications where operational stability is paramount.
ICGOOODFIND

The Infineon IRLTS2242TRPBF sets a high standard for P-Channel MOSFETs by combining ultra-low on-resistance, high current capability, and a space-saving package. It is an excellent solution for designers seeking to maximize efficiency and power density in advanced electronic systems.
Keywords:
Ultra-Low On-Resistance
P-Channel MOSFET
High-Efficiency Applications
Power Management
SuperSO8 Package
